| 摘要 |
The present invention relates to a semiconductor light-emitting device capable of improving the device's light extraction rate by forming a p-type semiconductor layer with multiple nano structures using a transparent electrode with a micro opening unit and a method of manufacturing the same. Also, the present invention relates to a semiconductor light-emitting device capable of improving the device's light extraction rate by forming a p-type semiconductor layer and a n-type semiconductor layer with multiple nano structures using a transparent electrode with a micro opening unit and a method of manufacturing the same. |
