发明名称 |
Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor |
摘要 |
Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor. |
申请公布号 |
US2014073143(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201213612538 |
申请日期 |
2012.09.12 |
申请人 |
ALOKOZAI FRED;MILLIGAN ROBERT BRENNAN;ASM IP HOLDINGS B.V. |
发明人 |
ALOKOZAI FRED;MILLIGAN ROBERT BRENNAN |
分类号 |
C23C16/505;F17D1/00;H01L21/31 |
主分类号 |
C23C16/505 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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