摘要 |
PROBLEM TO BE SOLVED: To provide a graphite crucible capable of preventing a quartz crucible from tilting toward the inside of the quartz crucible in order to manufacture a normal silicon single crystal.SOLUTION: A graphite crucible supporting a quartz crucible storing a silicon melt which is used for manufacturing a silicon single crystal by a CZ (Czochralski) method, comprises a straight cylindrical body part, a curving part and a bottom part. In the graphite crucible, ditches are formed only on an inner surface of the straight cylindrical body part in order to decrease the contact area between the graphite crucible and the quartz crucible and an area of a zone where the ditches are formed occupies 50% or more of the whole inner surface of the straight cylindrical body part. |