| 摘要 |
PROBLEM TO BE SOLVED: To inhibit charging of a semiconductor device and prevent abnormality in a transfer system of an ion implantation equipment.SOLUTION: A semiconductor device manufacturing method comprises: forming a first resist film 40 on a first conductivity type SOI substrate 10; forming openings in the first resist film 40 in first regions 70 surrounded by LOCOS oxide films 30; subsequently implanting a second conductivity type impurity 100 into a silicon layer 20 located in each opening; subsequently peeling the first resist film 40 to form trenches which pierce the LOCOS oxide film 30 and the silicon layer 20 so as to surround the first regions 70; and subsequently embedding insulation films in the trenches to an uppermost part of the silicon layer 20 to form element isolation films 60. By formation of the element isolation films 60, charging in a region surrounded by the element isolation films is discharged to the silicon layer. |
