| 发明名称 |
SEMICONDUCTOR HOLE STRUCTURE |
| 摘要 |
A first dielectric layer is formed over a substrate. A second dielectric layer is formed over the first dielectric layer. A first opening is formed in the second dielectric layer. A second opening is formed in the first dielectric layer. |
| 申请公布号 |
US2014070373(A1) |
申请公布日期 |
2014.03.13 |
| 申请号 |
US201213608794 |
申请日期 |
2012.09.10 |
| 申请人 |
TSAI NIEN-YU;CHEN WEI MING;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
TSAI NIEN-YU;CHEN WEI MING |
| 分类号 |
H01L29/06;H01L21/311 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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