发明名称 SELF-ALIGNED CONTACTS
摘要 Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure having a sidewall structure. The method further includes recessing the metal gate structure and forming a masking material within the recess. The method further includes forming a borderless contact adjacent to the metal gate structure, overlapping the masking material and the sidewall structure.
申请公布号 US2014070282(A1) 申请公布日期 2014.03.13
申请号 US201213607856 申请日期 2012.09.10
申请人 FAN SU CHEN;HORAK DAVID V.;PONOTH SHOM;RATH DAVID L.;SANKARAPANDIAN MUTHUMANICKAM;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FAN SU CHEN;HORAK DAVID V.;PONOTH SHOM;RATH DAVID L.;SANKARAPANDIAN MUTHUMANICKAM
分类号 H01L21/28;H01L29/78 主分类号 H01L21/28
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