Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure having a sidewall structure. The method further includes recessing the metal gate structure and forming a masking material within the recess. The method further includes forming a borderless contact adjacent to the metal gate structure, overlapping the masking material and the sidewall structure.
申请公布号
US2014070282(A1)
申请公布日期
2014.03.13
申请号
US201213607856
申请日期
2012.09.10
申请人
FAN SU CHEN;HORAK DAVID V.;PONOTH SHOM;RATH DAVID L.;SANKARAPANDIAN MUTHUMANICKAM;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
FAN SU CHEN;HORAK DAVID V.;PONOTH SHOM;RATH DAVID L.;SANKARAPANDIAN MUTHUMANICKAM