| 发明名称 |
FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME |
| 摘要 |
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed. |
| 申请公布号 |
US2014070265(A1) |
申请公布日期 |
2014.03.13 |
| 申请号 |
US201213611653 |
申请日期 |
2012.09.12 |
| 申请人 |
KOREC JACEK;NEILSON JOHN MANNING SAVIDGE;PENDHARKAR SAMEER;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KOREC JACEK;NEILSON JOHN MANNING SAVIDGE;PENDHARKAR SAMEER |
| 分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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