发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening. |
申请公布号 |
US2014070252(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201314015095 |
申请日期 |
2013.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN BOCK;KIM KI SEOK;KIM JE WON;SEO JU-BIN;YANG SEONG-SEOK;LEE SANG SEOK;LEE JOON SUB |
分类号 |
H01L33/36 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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