发明名称 MULTI-PORT MEMORY DEVICES AND METHODS HAVING PROGRAMMABLE IMPEDANCE ELEMENTS
摘要 A memory device can include at least two ports for transferring data to and from the memory device; and plurality of memory cells, each memory cell including at least one element programmable between different impedance states, and a plurality of access devices, each access device providing a current path between the element and a different one of the ports.
申请公布号 US2014071733(A1) 申请公布日期 2014.03.13
申请号 US201213615493 申请日期 2012.09.13
申请人 SUNKAVALLI RAVI;ADESTO TECHNOLOGIES CORPORATION 发明人 SUNKAVALLI RAVI
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址