摘要 |
One illustrative method disclosed herein involves forming a first fin for a first FinFET device in and above a semiconducting substrate, wherein the first fin is comprised of a first semiconductor material that is different from the material of the semiconducting substrate and, after forming the first fin, forming a second fin for a second FinFET device that is formed in and above the semiconducting substrate, wherein the second fin is comprised of a second semiconductor material that is different from the material of the semiconducting substrate and different from the first semiconductor material. |