发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which improves productivity.SOLUTION: In a semiconductor device manufacturing method of the present embodiment, a semiconductor wafer has bump electrodes 2 provided on a circuit surface and the semiconductor device manufacturing method comprises: a first process of forming an insulation resin layer on a whole area of the circuit surface so as to embed the bump electrodes 2; a second process of attaching a back grind tape to the insulation resin layer where the bump electrodes 2 are not exposed and thinning the semiconductor wafer; a third process of fixing the semiconductor wafer to a wafer ring; a fourth process of dicing the semiconductor wafer; a pickup process of picking up singulated semiconductor chips 11 by dicing; and an electrical connection process of electrically connecting the bump electrodes 2 of the semiconductor chip 11 and a substrate electrode 14 of a substrate 15. The insulating resin layer includes a polyimide resin and an epoxy resin and a hardening agent as ingredients. |
申请公布号 |
JP2014045206(A) |
申请公布日期 |
2014.03.13 |
申请号 |
JP20130217087 |
申请日期 |
2013.10.18 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
ENOMOTO TETSUYA;HONDA KAZUTAKA;NAGAI AKIRA;HATAKEYAMA KEIICHI |
分类号 |
H01L21/60;H01L21/301;H01L21/304 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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