SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A first MOSFET is formed in a first region of a chip, and a second MOSFET is formed in a second region thereof. A first source terminal and a first gate terminal are formed in the first region. In the second region, a second source terminal and a second gate terminal are arranged so as to be aligned substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned. A temperature detection diode is arranged between the first source terminal and the second source terminal. A first terminal and a second terminal of the temperature detection diode are aligned in a first direction substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned or in a second direction substantially perpendicular thereto.