发明名称 |
SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS |
摘要 |
An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, and a gate electrode of the high-voltage depletion-mode transistor is electrically coupled to the source electrode of the low-voltage enhancement-mode transistor. The on-resistance of the enhancement-mode transistor is less than the on-resistance of the depletion-mode transistor, and the maximum current level of the enhancement-mode transistor is smaller than the maximum current level of the depletion-mode transistor. |
申请公布号 |
WO2014014939(A3) |
申请公布日期 |
2014.03.13 |
申请号 |
WO2013US50722 |
申请日期 |
2013.07.16 |
申请人 |
TRANSPHORM INC. |
发明人 |
WU, YIFENG;MISHRA, UMESH;CHOWDHURY, SRABANTI |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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