| 摘要 |
PROBLEM TO BE SOLVED: To enhance photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A method of manufacturing a photoelectric conversion device comprises the steps of: preparing a first semiconductor layer 3 of a first conductivity type which contains a group I-III-VI compound; forming an oxide layer 3a on a main surface of the first semiconductor layer 3; injecting a group II-B element into the first semiconductor layer 3 through the oxide layer 3a by a sputtering method; and forming a second semiconductor layer 4 of a second conductivity type different from the first conductivity type on the main surface of the first semiconductor layer 3 after removing the oxide layer 3a. |
