NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device arranged so that the leak of current can be reduced while suppressing the collapse of current.SOLUTION: A GaN-based HFET as an embodiment of a nitride semiconductor device comprises: a gate electrode 19; a drain electrode 18; a first insulator film 21 located between the gate electrode 19 and the drain electrode 18, and formed on a nitride semiconductor laminate 15; and a second insulator film 22 located between the gate electrode 19 and the drain electrode 18, and formed on the first insulator film 21 and the nitride semiconductor laminate 15. The first insulator film 21 is spaced apart from the gate electrode 19 by a first distance X1 which is 60-90% of a second distance X2 between the gate electrode 19 and the drain electrode 18 along a surface of the nitride semiconductor laminate 15.