METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM, AND SILICON-CONTAINING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a silicon-containing thin film at a low temperature of 500°C or less.SOLUTION: A silicon-containing thin film is manufactured using Si(tBuNCHCHNtBu)(H)NCO and so on as a raw material under a reduction atmosphere by means of the thermal CVD method, using ammonia as reaction gas. Using the above specific hydrosilane derivative allows the manufacture of the silicon-containing thin film at a low temperature of 500°C or less without using plasma.