| 摘要 |
<p>The invention especially relates to the production of a field-effect transistor from a stack of layers forming a semiconductor-on-insulator substrate, the stack comprising a surface layer of an initial thickness, made of a crystalline semiconductor material and covered with a protective layer, the process being characterised in that it comprises the following steps: defining, by photolithography, a gate pattern in the protective layer; etching the gate pattern into the surface layer so as to leave a thickness of the layer of semiconductor material in place, said thickness defining the height of a conduction channel of the field-effect transistor; forming a gate (120) in the gate pattern; and forming, in the surface layer and on either side of the gate (120), source and drain zones (110), while preserving, in these zones, the initial thickness of the surface layer.</p> |
