SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus, which can introduce an impurity only into an extremely shallow region of a surface layer of a substrate in a short processing time.SOLUTION: A substrate processing method comprises: discharging a coating liquid containing dopant to a surface of a rotating silicon substrate to coat a whole area of the surface with the coating liquid; subsequently forming a multi-layer thin film 101 containing dopant on the substrate surface by heating the substrate; and diffusing the dopant contained in the thin film 101 on the substrate surface on which the multi-layer thin film 101 is formed, by exposing flash light on the substrate surface to heat the substrate surface. Since the exposure time of the flash light is an extremely short time of not less than 0.01 ms and not more than 100 ms, the heated time of a neighborhood of the substrate surface is extremely short, thereby reducing a diffusion length of the dopant and allowing an impurity to be introduced only into an extremely shallow region of a surface layer of the substrate.