OXIDE SEMICONDUCTOR LAMINATED FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor laminated film which hardly causes variation in electrical characteristics of a transistor and is highly stable, and to provide a transistor having electrically stable characteristics which uses the oxide semiconductor laminated film for a region in which a channel is formed.SOLUTION: The oxide semiconductor laminated film contains indium, gallium, and zinc and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer laminated sequentially. The second oxide semiconductor layer has a higher indium content than the first oxide semiconductor layer and the third oxide semiconductor layer. The oxide semiconductor laminated film has an absorption coefficient of 3×10/cm or less as measured by a CPM in an energy range of 1.5 to 2.3 eV inclusive.