发明名称 POWER SEMICONDUCTOR MODULE, POWER CONVERSION APPARATUS AND POWER SEMICONDUCTOR MODULE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor module which is excellent in heat dissipation capacity, productivity and terminal connection reliability.SOLUTION: A power semiconductor module 30 comprises a case wall part 33A including: a heat dissipation part 331 to which a conductor plate 104a is depressed via an insulation member 102; a frame part which surrounds the heat dissipation part 331; and a ring-shaped connection part 332 which connects an outer periphery of the heat dissipation part 331 and an inner periphery of the frame part. The ring-shaped connection part 332 includes: a first thin part 332a which is connected to the heat dissipation part 331; a second thin part 332c which is connected to the frame part 335; and a thick part 332b which is provided between the first and second thin parts 332a, 332c. With this configuration, by depressing the heat dissipation part 331 in a case inner side direction, snap buckling occurs at the connection part 332 and the heat dissipation part 331 is pressed into a sealed body 107. Since the first thin part 332a is inclined so as to be positioned in the case inner side direction than the second thin part 332c, a state where the heat dissipation part 331 is depressed to the sealed body 107 is maintained by a reaction force of the connection part 332.
申请公布号 JP2014045014(A) 申请公布日期 2014.03.13
申请号 JP20120185507 申请日期 2012.08.24
申请人 HITACHI AUTOMOTIVE SYSTEMS LTD 发明人 SASAKI KOJI;SHIMURA TAKAHIRO
分类号 H01L25/18;H01L23/34;H01L25/07 主分类号 H01L25/18
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