TEMPERATURE CONTROL OF SEMICONDUCTOR PROCESSING CHAMBERS BY MODULATING PLASMA GENERATION ENERGY

摘要

Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The pedestal temperature controller is configured to regulate the temperature of the semiconductor processing chamber through a pedestal disposed at the bottom of the semiconductor processing chamber.