发明名称 |
One-Time Programmable Memory Cell |
摘要 |
A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics. |
申请公布号 |
US2014071731(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201213608595 |
申请日期 |
2012.09.10 |
申请人 |
SCHMITT JONATHAN;CARLSON ROY MILTON;LU YONG;HYNES OWEN;BROADCOM CORPORATION |
发明人 |
SCHMITT JONATHAN;CARLSON ROY MILTON;LU YONG;HYNES OWEN |
分类号 |
G11C17/12;H01L27/088 |
主分类号 |
G11C17/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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