| 摘要 |
According to the present invention, a power module in which the thermal stress between a semiconductor chip and a substrate is relaxed by liquefaction of a solder layer, by which the semiconductor chip is positioned on the substrate, such that generation of cracks between the semiconductor chip and the substrate can be prevented and bonding strength is ensured is provided. Further, the following is provided: a power module 1 comprises a semiconductor chip 2 and a substrate 3 on which the semiconductor chip 2 is positioned The power module further comprises a solder layer 4 provided between the semiconductor chip 2 and the substrate 3, the solder layer 4 liquefying due to heat generated by the semiconductor chip 2 and a resin material 5 that connects the semiconductor chip 2 and the substrate 3, the resin material 5 deforming to follow the thermal expansion difference between the semiconductor chip 2 and the substrate 3 that is generated upon the heat generation. The melting point of the resin material 5 is higher than the melting point of the solder layer 4. |
