发明名称 Component e.g. semiconductor chip, for use in electronic device, has insulating layer arranged above first metal coating, second metal coating applied above insulating layer, and ductile metal film arranged between metal coatings
摘要 The component (100) has a first metal coating (120) applied in a semiconductor substrate e.g. silicon. An insulating layer (140) is arranged above the first metal coating. A second metal coating is applied above the insulating layer. A ductile metal film (180) is arranged between the first metal coating and the second metal coating. A metal barrier layer (170) is arranged between the two metal coatings. The ductile metal film is directly located on the metal barrier layer. The insulating layer is directly located on the ductile metal film that is made of undoped aluminum. Independent claims are also included for the following: (1) a method for manufacturing a component (2) a method for testing a component (3) an electronic device.
申请公布号 DE102013112423(A1) 申请公布日期 2014.03.13
申请号 DE201310112423 申请日期 2013.11.12
申请人 INFINEON TECHNOLOGIES AG 发明人 MEYER-BERG, GEORG;PUFALL, REINHARD
分类号 H01L23/58;G01R31/26;G01R31/28;H01L21/66;H01L23/544 主分类号 H01L23/58
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