| 摘要 |
<p>The present invention relates to a semiconductor light emitting device comprising a plurality of semiconductor layers which comprises a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity, an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and which generates light by recombining an electron with a hole; a first electrode which offers at least one of the electron or the hole to the semiconductor layers; a second electrode which offers the remaining one of the electron or the hole to the semiconductor layers; a non-conductive distribution brag reflector which is combined with the semiconductor layers to reflect the light of the active layer; and a first transparent film which is connected to a distribution brag reflector to the other side of the semiconductor layers based on the non-conductive distribution brag reflector and which comprises a refractive index which is lower than the effective refractive index of the distribution brag reflector.</p> |
