发明名称 METHOD FOR DOPING ZINC OXIDE BASED CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a doping method by which stable diffusion excellent in reproducibility can be performed, and diffusion having a uniform in-plane distribution and excellent in controllability can be performed.SOLUTION: A doping method includes the steps of: using carbonate containing a group I element as a constituent element, as a diffusion agent, spraying fine liquid droplets of the solution of the diffusion agent on a ZnO based crystal, and drying the sprayed fine liquid droplets to be firmly fixed, thereby forming a deposition layer of the diffusion agent; and subjecting the ZnO based crystal, on which the deposition layer of the diffusion agent has been formed, to heat treatment and diffusing the group I element in the ZnO based crystal.
申请公布号 JP2014045017(A) 申请公布日期 2014.03.13
申请号 JP20120185556 申请日期 2012.08.24
申请人 STANLEY ELECTRIC CO LTD 发明人 SATO YUKA;HORIO TADASHI
分类号 H01L21/385;C30B29/16;C30B31/02;H01L21/225;H01L33/28 主分类号 H01L21/385
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