| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing current collapse and a leakage current.SOLUTION: A semiconductor device 10 includes nitride semiconductor layers 13 and 14, a drain electrode 16 and a source electrode 17, a cap layer 18, and a gate electrode 19. The nitride semiconductor layers 13 and 14 are provided above a semiconductor substrate 11 and includes a channel layer 13. The drain electrode 16 and the source electrode 17 are provided on the nitride semiconductor layers 13 and 14. The cap layer 18 is provided on the nitride semiconductor layers 13 and 14 between the drain electrode 16 and the source electrode 17, and has an opening 18a at a position spaced apart from the drain electrode 16 and the source electrode 17. The gate electrode 19 is disposed so as to be in contact with the nitride semiconductor layer 14 exposed from the opening 18a of the cap layer 18 and is insulated from side walls of the opening 18a of the cap layer 18. In the opening 18a, the distance between the gate electrode 19 and the side walls of the opening 18a becomes longer as going toward the downside. |
