发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can improve yield of a semiconductor device manufactured by bonding of a first substrate and a second substrate.SOLUTION: A semiconductor device manufacturing method according to one embodiment comprises a first process, a second process and a third process. In the first process, a surface of at least one between surfaces of a first substrate and a second substrate is polished. In the second process, the surface of the substrate, which is polished in the first process is roughened. In the third process, a surface of the other substrate is bonded to the surface of the substrate, which is roughened in the second process.
申请公布号 JP2014045095(A) 申请公布日期 2014.03.13
申请号 JP20120186968 申请日期 2012.08.27
申请人 TOSHIBA CORP 发明人 HONGO SATOSHI;TANIDA KAZUMA
分类号 H01L21/02;H01L21/304;H01L27/14 主分类号 H01L21/02
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