发明名称 PLASMA ETCHING APPARATUS AND CONTROL METHOD
摘要 In a control method, a first processing is performed on an object to be processed by controlling a temperature of a base to a first temperature and controlling a temperature of an electrostatic chuck that is disposed on a mounting surface of the base so as to mount thereon the object to be processed and has a heater installed therein to a second temperature. A second processing is performed on the object by controlling a temperature of the base to a third temperature and controlling a temperature of the electrostatic chuck to a fourth temperature by a heater. In the control method, a difference between the first temperature and the second temperature and a difference between the third temperature and the fourth temperature are within a tolerable temperature of the junction layer for bonding the base and the electrostatic chuck.
申请公布号 US2014073066(A1) 申请公布日期 2014.03.13
申请号 US201314013128 申请日期 2013.08.29
申请人 TOKYO ELECTRON LIMITED 发明人 TABUCHI ATSUHIKO
分类号 H01L21/66 主分类号 H01L21/66
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