| 摘要 |
<p>Disclosed are a bipolar junction transistor and a manufacturing method thereof. The bipolar junction transistor comprises a first conductivity type bottom well region (100), a second conductivity type well region (101) located at the first conductivity type bottom well region (100), a first conductivity type well region (102) located respectively at two sides of the second conductivity type well region (101) and at the first conductivity type bottom well region (100), a first conductivity type emitter region (103) located at the second conductivity type well region (101), a second conductivity type base region (104) located at two sides of the first conductivity type emitter region (103), and a first conductivity type collector region (105) located at the first conductivity type well region (102). A second conductivity type injector region (106) is arranged under the first conductivity type emitter region (103). In the case of meeting requirements of an amplification factor, the bipolar junction transistor has good high-voltage resistance capabilities, and the manufacturing method of the bipolar junction transistor can be compatible with the existing manufacturing process.</p> |
