| 摘要 |
Disclosed are an inverter used for the driving circuit of a display device and a load transistor having the same. The inverter includes a substrate; a gate electrode located on the substrate; a source electrode/drain electrode located on the gate electrode; a floating electrode located on the source electrode/drain electrode. The gate electrode and the floating electrode are located on the same axis. [Reference numerals] (AA) Start; (BB) End; (S502) Form a gate electrode on the substrate; (S504) Sequentially form a gate insulating film and an oxide semiconductor layer on the gate electrode; (S506) Form an etch stopper on the top of the oxide semiconductor layer; (S508) Form a drain electrode in which the shape is a ring shape in a floor plan of at least one part on the etch stopper or in a shape in which one part is removed; (S510) Form a protective layer on the drain electrode; (S512) Form a contact hole penetrated through the protective layer in the inside of a ring shape on the floor plan or having a shape in which one part is removed in a ring shape; (S514) Form a source electrode inside the protective layer through the contact hole; (S516) Form a connection electrode inside the remaining part of the contact hole and on the protective layer |
