A METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING AN AIR GAP

摘要

A method of manufacturing a semiconductor device includes defining active regions having first conductive layer patterns on a substrate between trench isolation regions by forming the trench isolation regions in the substrate; forming sacrificial layer patterns having a top surface lower than a top surface of the first conductive layer pattern between the first conductive layer patterns;forming first insulation layer patterns on the sacrificial layer patterns so that some of the sacrificial layer patterns is exposed; forming air-gaps at lower portions of the first insulation layer patterns by removing the sacrificial layer patterns; forming second insulation layer patterns between the first insulation layer patterns; etching the first and second insulation layer patterns by a predetermined depth; forming gate structures including the first conductive layer patterns on the active regions; and extending the air-gaps by removing remaining second and third insulation layer patterns.