| 摘要 |
A method of fabricating a semiconductor device is provided to avoid generation of voids in a metal material deposition process by improving an adhesion characteristic and an electro-migration characteristic between a barrier metal layer and a metal material. An interlayer dielectric(102,105) is formed on an upper surface of a semiconductor substrate(101). A dual damascene pattern(106) is formed on the interlayer dielectric. A barrier metal layer(107,108) is formed on the entire surface of the semiconductor substrate. A chilling process for the semiconductor substrate is performed. A metal line(110) is formed on the dual damascene pattern. The barrier metal layer is formed by an atomic layer deposition method. |
