发明名称 |
METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT |
摘要 |
<p>The present invention relates to a method and a structure for an extreme ultraviolet electrostatic chuck with a reduced clamping effect. More particularly, the present invention provides one embodiment of a semiconductor structure. According to the embodiment of the present invention, the semiconductor structure includes a semiconductor substrate, an IC formed on the semiconductor substrate; and a polysilicon layer arranged on the back surface of the semiconductor substrate. [Reference numerals] (52) Provide a semiconductor substrate; (54) Form polysilicon on both front and back surfaces of the semiconductor substrate; (56) Remove the polysilicon from the front surface of the semiconductor substrate; (58) Implant the polysilicon on the back surface of the semiconductor substrate; (608) Expose the photoresist layer using an EUV(extreme ultraviolet) beam; (62) Coat the semiconductor substrate with a photoresist layer on the front surface; (64) Fix the semiconductor substrate on an electronic chuck from the back surface; (66) Flow a gas between the semiconductor substrate and the electronic chuck</p> |
申请公布号 |
KR20140031077(A) |
申请公布日期 |
2014.03.12 |
申请号 |
KR20130004288 |
申请日期 |
2013.01.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSU CHIA HAO;CHEN CHIA CHEN;FU TZUNG CHI;KAO TZU WEI;LIN YU CHAO |
分类号 |
H01L21/02;H01L21/027 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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