| 摘要 |
<p>Provided are a nonvolatile memory device and a method for manufacturing the same. According to one embodiment of the present invention, the nonvolatile memory device comprises a gate structure which is formed on a substrate and includes a successively stacked tunnel insulating layer, a floating gate, an intergate insulating layer, and a control gate; and an interlayer dielectric which covers the gate structure and has an air gap that is formed between the gate structures, wherein the bottom surface of the air gap is lower than the surface of the tunnel insulating layer.</p> |
