| 摘要 |
<p>A method of patterning a multi-layer mask is described. The method includes preparing a multi-layer mask on a substrate, wherein the multi-layer mask includes a lithographic layer and an intermediate mask layer underlying the lithographic layer, and wherein the intermediate mask layer comprises a carbon-containing compound. The method further includes: establishing an etch process recipe for transferring a pattern, that is formed in the lithographic layer and characterized by an initial pattern critical dimension (CD), to the intermediate mask layer; establishing at least one parametric relationship between an intermediate pattern CD to be formed in the intermediate mask layer and at least one process parameter, wherein the at least one parametric relationship provides process conditions capable of increasing and decreasing the initial pattern CD to the intermediate pattern CD; selecting a target process condition to achieve a target CD adjustment between the initial pattern CD and the intermediate pattern CD; and transferring the pattern from the lithographic layer to the intermediate mask layer using the target process condition.</p> |
