| 摘要 |
PROBLEM TO BE SOLVED: To provide an ITO sputtering target which hardly generates cracks even if a content of Sn is small, and particularly hardly generates cracks when bonded to a packing plate.SOLUTION: The ITO sputtering target contains 5 mass% or lower of Sn at SnOconversion, and is -650 to -200 MPa in residual stress. The residual stress is preferable to be -600 to -200 MPa when a thermal expansion coefficient of the packing plate to which the ITO sputtering target is bonded is 2.386×10/°C, and also preferable to be -650 to -250 MPa when the thermal expansion coefficient is larger than 2.386×10/°C. The ITO sputtering target is hardly cracked even if the content of SnOis not larger than 5 mass%. and hardly cracked even if bonded to the copper packing plate or the like. |
