发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition wherein generation of a defect is suppressed, and to provide a resist pattern forming method. <P>SOLUTION: The positive resist composition includes a base material component (A) for increasing solubility to alkali developing solution by action of an acid, an acid generating agent component (B) for generating an acid by exposure, and a fluorine-containing compound component (C) shown by a general formula (c-1). In the general formula (c-1), R<SP>1</SP>is an organic group which may include a polymeric group; X is a divalent organic group which has an acid dissociative portion, and R<SP>2</SP>is an organic group which has a fluorine atom. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5439154(B2) 申请公布日期 2014.03.12
申请号 JP20090284459 申请日期 2009.12.15
申请人 发明人
分类号 G03F7/004;C08F20/26;G03F7/039;H01L21/027 主分类号 G03F7/004
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