PHOTODETECTOR FOR ULTRAVIOLET LIGHT HAVING HIGH SENSITIVITY AND LOW DARK CURRENT

摘要

The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.