| 摘要 |
The present invention relates to a TSV structure of a semiconductor memory device capable of testing a TSV in a wafer level, and a testing method thereof. A test for the TSV is performed in a wafer level before packaging. A TSV where a fail is generated is repaired in advance. Therethrough, the waste ratio of a stacking memory package is reduced and manufacturing costs caused by the manufacture of an unnecessary redundancy TSV can be saved. |
