| 摘要 |
The present invention provides a method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method comprising checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation. The inventive method enables early and easy detection of non-uniformity of the ion implantation due to a malfunction in an apparatus and so on in the ion implantation operation and thereby enables stability of production quality and reduction in a malfunction period. The present invention also provides a method for manufacturing a semiconductor wafer utilizing the checking method. |
