| 摘要 |
1,128,603. Coating by cathode sputtering. WESTERN ELECTRIC CO. Inc. Dec. 10, 1965 [March 29, 1965], No. 52475/65. Heading C7F. A protective nitride or carbide film is produced on a substrate, particularly a Si 3 N 4 , AlN or BeN film on a Si, Ge, CdS, Ga As or GaP semi-conductor body, by cathode sputtering from a cathode formed of the element to be the cation of the nitride or carbide, e. g. Si, A1 or Be, in a gas plasma of N 2 or CH 4 , with a D. C. voltage of at least 125 volts applied between the anode and cathode, and a R. F. signal of at least 50 Kc/s and of greater voltage applied to the interface between the cathode and plasma. Preferably the plasma has a gas pressure of 0À1-10 mm Hg and a positive ion saturation current density of 0.1-100 ma/sq cm. The substrate may be other Group II-VI or III-V semi-conductors, or Au, Al, Ta, BeO, quartz or glass. |
