| 摘要 |
1,156,777. Subdividing semi-conductor wafers. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 29 May, 1968 [28 June, 1967], No. 29891/67. Heading H1K. A semi-conductor wafer 1 is provided with a pn-junction 2 parallel to its major faces, e.g. by diffusion, criss-cross grooves 5, 6 are formed in one major face 3 to a depth greater than that of the junction 2, and the wafer is then separated into discrete elements by breaking along the lines of the grooves 5, 6. The grooves 5, 6 may be formed by an oscillating cutter fed with abrasive material. After grooving the wafer is cleaned by etching and the exposed edges of the junction 2 are protected. The ungrooved face is then scored with a diamond cutter opposite the lines of the grooves 5, 6 and the wafer is broken. |
