| 摘要 |
A surface emitting semiconductor laser includes a first semiconductor layer sequence, which comprises a pump laser. A second semiconductor layer sequence is arranged on the first semiconductor layer sequence and comprises a vertical emitter. The vertical emitter has a radiation-emitting active layer, a radiation exit side and a connecting side lying opposite the radiation exit side. The pump laser is arranged at the radiation exit side of the vertical emitter and a carrier body is arranged at the connecting side of the vertical emitter. Furthermore, a method for producing a surface emitting semiconductor laser is specified. |
