SEMICONDUCTOR DEVICE HAVING BURIED BITLINE AND METHOD FOR FABRICATING THE SAME

摘要

The present technique provides a semiconductor device having a buried bit line capable of reducing parasitic capacitance between adjacent buried bit line and a method for fabricating the same. A semiconductor device includes: a semiconductor body formed vertically in a semiconductor substrate; a buried bit line which is formed in the semiconductor body and includes metal silicide; and a barrier layer which is formed in the upper and the lower part of the buried bit line and contains germanium.