| 摘要 |
<p>The cell (41) has two regions (41a, 41b) arranged adjacent to a third region (41c). The first, second and third regions are extended from an upper electrode (39) to a lower electrode (33), where crystallization temperature of the second region ranges between the crystallization temperature of the first region and the crystallization temperature of the third region, and the melting temperatures of the first, second, and third regions are identical. The first region is surrounded with the second region that is surrounded with the third region. Independent claims are also included for the following: (1) a method for manufacturing a memory cell (2) a method for using a memory cell.</p> |
