发明名称 |
A schottky barrier diode, a method of forming the diode and a design structure for the diode |
摘要 |
Disclosed are embodiments of a Schottky barrier diode. This diode can be formed in a semiconductor substrate having a doped region with a first conductivity type. A trench isolation structure can laterally surround a section of the doped region at the top surface of the substrate. A semiconductor layer can be positioned on the top surface of the substrate. This semiconductor layer can have a Schottky barrier portion over the defined section of the doped region and a guardring portion over the trench isolation structure laterally surrounding the Schottky barrier portion. The Schottky barrier portion can have the first conductivity type and the guarding portion can have a second conductivity type different from the first conductivity type. A metal silicide layer can overlie the semiconductor layer. Also disclosed are embodiments of a method of forming this Schottky barrier diode and of a design structure for the Schottky barrier diode. |
申请公布号 |
GB2499176(B) |
申请公布日期 |
2014.03.12 |
申请号 |
GB20130010844 |
申请日期 |
2012.01.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MARK E STIDHAM;ROBERT M RASSEL |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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