发明名称 Method for improving flatness of a layer deposited on polycrystalline layer
摘要 Described is a method for improving the flatness of a layer deposited on a doped polycrystalline layer, which includes reducing the grain size of the polycrystalline layer to decrease the out-diffusion amount of the dopant from the polycrystalline layer, and/or reducing the amount of the out-diffusing dopant on the surface of the polycrystalline layer.
申请公布号 US8669184(B2) 申请公布日期 2014.03.11
申请号 US201113012506 申请日期 2011.01.24
申请人 LUOH TUUNG;YANG LING-WU;YANG TA-HONE;CHEN KUANG-CHAO;MACRONIX INTERNATIONAL CO., LTD. 发明人 LUOH TUUNG;YANG LING-WU;YANG TA-HONE;CHEN KUANG-CHAO
分类号 H01L21/302 主分类号 H01L21/302
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