发明名称 VACUUM AND PRESSURIZATION APPARATUS FOR RESIDUAL GAS AND IMPURITY REMOVAL
摘要 The present invention relates to a device for removing residual gas and impurities using vacuum and pressurization and, more specifically, to a device for removing the residual gas and the impurities using vacuum and pressurization capable of filling nitride gas into the FOUP at high pressure or repeatedly maintaining the inside of the FOUP in a vacuum condition and efficiently removing the residual gas and impurities inside the FOUP. The present invention includes a vacuum pump for discharging the nitride gas and impurities in a processing chamber by being connected to a nitride supplying part where the nitride gas is stored, and to a supplying pipe connected to the nitride supplying part, by being connected to the processing chamber where the FOUP, which is transferring a wafer, is transferred through the discharging pipe.
申请公布号 KR101372448(B1) 申请公布日期 2014.03.11
申请号 KR20130011998 申请日期 2013.02.01
申请人 NANO SEMICON CO., LTD. 发明人 YOO, JEONG HO
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
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