| 摘要 |
The present invention relates to a semiconductor memory device. According to an embodiment of the present invention, an operating method of the semiconductor memory device comprises the steps of: setting a plurality of cell strings by applying a negative voltage to at least one word line among word lines connected to the plurality of cell strings and applying a positive voltage to a common source line; and processing a program operation for a selected region of the plurality of cell strings. [Reference numerals] (AA) Start; (BB) End; (S110) Set a plurality of cell strings of a selected memory block; (S120) Program selected memory cells |
